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| PD - 94947A IRLML6302PBF l l l l l l l l Generation V Technology Ultra Low On-Resistance P-Channel MOSFET SOT-23 Footprint Low Profile (<1.1mm) Available in Tape and Reel Fast Switching Lead-Free HEXFET(R) Power MOSFET D VDSS = -20V G S RDS(on) = 0.60 Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. A customized leadframe has been incorporated into the standard SOT-23 package to produce a HEXFET Power MOSFET with the industry's smallest footprint. This package, dubbed the Micro3, is ideal for applications where printed circuit board space is at a premium. The low profile (<1.1mm) of the Micro3 allows it to fit easily into extremely thin application environments such as portable electronics and PCMCIA cards. Micro3 Absolute Maximum Ratings Parameter I D @ TA = 25C I D @ TA = 70C IDM PD @TA = 25C VGS dv/dt TJ, TSTG Continuous Drain Current, VGS @ -4.5V Continuous Drain Current, VGS @ -4.5V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt Junction and Storage Temperature Range Max. -0.78 -0.62 -4.9 540 4.3 12 -5.0 -55 to + 150 Units A mW mW/C V V/ns C Thermal Resistance RJA Maximum Junction-to-Ambient Parameter Typ. Max. 230 Units C/W 08/25/05 IRLML6302PBF Electrical Characteristics @ TJ = 25C (unless otherwise specified) Parameter Drain-to-Source Breakdown Voltage V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient V(BR)DSS RDS(ON) VGS(th) g fs IDSS I GSS Qg Q gs Qgd td(on) tr td(off) tf Ciss Coss Crss Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. -20 -0.70 0.56 Typ. -4.9 2.4 0.56 1.0 13 18 22 22 97 53 28 Max. Units Conditions V VGS = 0V, ID = -250A mV/C Reference to 25C, ID = -1mA 0.60 VGS = -4.5V, ID = -0.61A 0.90 VGS = -2.7V, ID = -0.31A -1.5 V VDS = VGS, ID = -250A S VDS = -10V, ID = -0.31A -1.0 VDS = -16V, VGS = 0V A -25 VDS = -16V, VGS = 0V, TJ = 125C -100 VGS = -12V nA 100 VGS = 12V 3.6 ID = -0.61A 0.84 nC VDS = -16V 1.5 VGS = -4.5V, See Fig. 6 and 9 VDD = -10V ID = -0.61A ns RG = 6.2 RD = 16, See Fig. 10 VGS = 0V pF VDS = -15V = 1.0MHz, See Fig. 5 Source-Drain Ratings and Characteristics IS I SM VSD t rr Q rr Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Min. Typ. Max. Units -0.54 35 26 -4.9 -1.2 53 39 V ns nC A Conditions MOSFET symbol showing the G integral reverse p-n junction diode. TJ = 25C, IS = -0.61A, VGS = 0V TJ = 25C, IF = -0.61A di/dt = 100A/s D S Notes: Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 ) Pulse width 300s; duty cycle 2%. Surface mounted on FR-4 board, t 5sec. ISD -0.61A, di/dt 76A/s, VDD V(BR)DSS, TJ 150C IRLML6302PBF 10 VGS - 7.5V - 5.0V - 4.0V - 3.5V - 3.0V - 2.5V - 2.0V BOTTOM - 1.5V TOP 10 -I D , Drain-to-Source Current (A) -ID , Drain-to-Source Current (A) VGS - 7.5V - 5.0V - 4.0V - 3.5V - 3.0V - 2.5V - 2.0V BOTTOM - 1.5V TOP 1 1 0.1 0.1 -1.5V 20s PULSE WIDTH TJ = 150C 0.1 1 10 0.01 0.1 -1.5V 1 20s PULSE WIDTH TJ = 25C A 10 0.01 A -VDS , Drain-to-Source Voltage (V) -V , Drain-to-Source Voltage (V) DS Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 10 2.0 -ID , Drain-to-Source Current (A) TJ = 25C TJ = 150C R DS(on) , Drain-to-Source On Resistance (Normalized) I D = -0.61A 1.5 1 1.0 0.1 0.5 0.01 1.5 2.0 2.5 3.0 VDS = -10V 20s PULSE WIDTH 3.5 4.0 4.5 A 0.0 -60 -40 -20 0 20 40 60 80 V GS = -4.5V 100 120 140 160 A -VGS , Gate-to-Source Voltage (V) TJ , Junction Temperature (C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature IRLML6302PBF 180 160 140 -V GS , Gate-to-Source Voltage (V) Ciss V GS = 0V, f = 1MHz C iss = Cgs + C gd , Cds SHORTED C rss = C gd C oss = C ds + C gd 10 I D = -0.61A VDS = -16V 8 C, Capacitance (pF) 120 100 80 60 40 20 0 1 Coss 6 Crss 4 2 10 100 A 0 0.0 FOR TEST CIRCUIT SEE FIGURE 9 1.0 2.0 3.0 4.0 A -VDS , Drain-to-Source Voltage (V) Q G , Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 10 10 -ISD , Reverse Drain Current (A) OPERATION IN THIS AREA LIMITED BY R DS(on) -I D , Drain Current (A) 1 100s TJ = 150C TJ = 25C 0.1 1 1ms 10ms 0.01 0.4 0.6 0.8 1.0 VGS = 0V 1.2 A 1.4 0.1 1 TA = 25C TJ = 150C Single Pulse 10 100 A -VSD , Source-to-Drain Voltage (V) -VDS , Drain-to-Source Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area IRLML6302PBF QG V DS VGS RG RD -4.5V VG -4.5V Charge Pulse Width 1 s Duty Factor 0.1 % Fig 9a. Basic Gate Charge Waveform Current Regulator Same Type as D.U.T. Fig 10a. Switching Time Test Circuit VDS 50K 12V .2F .3F 90% VGS -3mA IG ID Current Sampling Resistors Fig 9b. Gate Charge Test Circuit 1000 Thermal Response (Z thJA ) 100 D = 0.50 0.20 0.10 10 0.05 0.02 0.01 PDM SINGLE PULSE (THERMAL RESPONSE) t1 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJA + TA 0.0001 0.001 0.01 0.1 1 10 100 1 0.1 0.00001 Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient + D.U.T. VDS 10% VGS td(on) tr t d(off) tf Fig 10b. Switching Time Waveforms t1 , Rectangular Pulse Duration (sec) + - QGS QGD D.U.T. VDD - IRLML6302PBF Peak Diode Recovery dv/dt Test Circuit D.U.T + + Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer - + RG VGS* ** * dv/dt controlled by RG * I SD controlled by Duty Factor "D" * D.U.T. - Device Under Test + - VDD * * Reverse Polarity for P-Channel ** Use P-Channel Driver for P-Channel Measurements Driver Gate Drive P.W. Period D= P.W. Period [VGS=10V ] *** D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt [VDD] Re-Applied Voltage Inductor Curent Body Diode Forward Drop Ripple 5% [ISD] *** VGS = 5.0V for Logic Level and 3V Drive Devices Fig 13. For P-Channel HEXFETS IRLML6302PBF Micro3 (SOT-23) (Lead-Free) Package Outline Dimensions are shown in millimeters (inches) % 6 < 0 % 2 / 9DH@ITDPIT HDGGDH@U@ST HDI H6Y '( ! '' ! $ " ' ! "# !' ! !%# # ! ($A7T8 (A7T8 # % !$A7T8 ' ! $ DI8C@T HDI H6Y "% ## # "( "$ # ( (% "! &' ( '" " #' $$ "&$A7T8 &$A7T8 $' !"% 'A7T8 ' # ' % 9 $ " % @ ! @ ppp 876 r r 7 $ 6 6 6! i p 9 @ @ r r G G hhh iii ppp # C G $ $ 6 "YAi iii 867 hhh 8 "ATVSA & "YAG S@8PHH@I9@9AAPPUQSDIU IPU@T AA9DH@ITDPIDIBA6I9AUPG@S6I8DIBAQ@SA6TH@A #$H ((# !AA9DH@ITDPITA6S@ATCPXIADIAHDGGDH@U@STA6I9ADI8C@T "AA8PIUSPGGDIBA9DH@ITDPI)AHDGGDH@U@S #AAA96UVHAQG6I@ACADTAGP86U@9A6UAUC@AHPG9AQ6SUDIBAGDI@ $AAA96UVHA6A6I9A7AUPA7@A9@U@SHDI@9A6UA96UVHAQG6I@AC %AAA9DH@ITDPITA9A6I9A@ A6S@AH@6TVS@9A6UA96UVHAQG6I@AC &AAA9DH@ITDPIAGADTAUC@AG@69AG@IBUCAAPSATPG9@SDIBAUPA6ATV7TUS6U@ 'AAPVUGDI@A8PIAPSHTAUPAE@9@8APVUGDI@AUP!"%67 (&! "Y b"'d !&#! b &(d ($ b"&$d AAAAA'! "Y AAAAAb" d ( b&$d Micro3 (SOT-23 / TO-236AB) Part Marking Information XA2A !%ADAAQS@8@9@9A7AG6TUA9DBDUAPAA86G@I96SA@6S A2A@6S XA2AX@@F @6S ! !! !" !# !$ !% !& !' !( ! ! " # $ % & ' ( XPSF X@@F ! " # X 6 7 8 9 Q6SUAIVH7@S GPU 8P9@ Q6SUAIVH7@SA8P9@AS@A@S@I8@) 6A2ADSGHG!#! 7A2ADSGHG!'" 8A2ADSGHG%"! 9A2ADSGHG$ " @A2ADSGHG%#! AA2ADSGHG%# BA2ADSGHG!$! CA2ADSGHG$!" !# !$ !% XPSF X@@F !& !' !( " Y a XA2A!&$!ADAAQS@8@9@9A7A6AG@UU@S @6S ! !! !" !# !$ !% !& !' !( ! 6 7 8 9 @ A B C E F X 6 7 8 9 Ir)A6AyvrAhirAurAxArrx hAuAurrAvqvphrAGrhqAAArr $ $ $! Y a IRLML6302PBF Micro3TM Tape & Reel Information Dimensions are shown in millimeters (inches) 2.05 ( .080 ) 1.95 ( .077 ) 4.1 ( .161 ) 3.9 ( .154 ) 1.6 ( .062 ) 1.5 ( .060 ) 1.85 ( .072 ) 1.65 ( .065 ) 1.32 ( .051 ) 1.12 ( .045 ) TR 3.55 ( .139 ) 3.45 ( .136 ) 8.3 ( .326 ) 7.9 ( .312 ) FEED DIRECTION 4.1 ( .161 ) 3.9 ( .154 ) 1.1 ( .043 ) 0.9 ( .036 ) 0.35 ( .013 ) 0.25 ( .010 ) 178.00 ( 7.008 ) MAX. 9.90 ( .390 ) 8.40 ( .331 ) NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541. Data and specifications subject to change without notice. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. 08/05 |
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